B. S. Swartzentruber

Author

Also Known As

B S Swartzentruber, B. S. Swartzentruber, B. Swartzentruber, B.S Swartzentruber, B.S. Swartzentruber, BRIAN SWARTZENTRUBER, Brian S. Swartzentruber, Brian Swartzentruber, Swartzentruber, B. S., Swartzentruber, Brian S.

151

Publications

Citations

H-Index

110

Concepts

All Affiliations

Sandia National Laboratories Center for Integrated Nanotechnologies Sandia National Laboratories California University of Wisconsin–Madison University of New Mexico

About

B. S. Swartzentruber is an author at Sandia National Laboratories specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	40	66	7.3K
2	Applied Physics	34	58	6.7K
3	Natural Sciences	13	14	1.1K
4	Medicine	3	3	197
5	Biomedical Engineering	1	1	87

B. S. Swartzentruber

Publications

7.7K

Citations

H-Index

Page 1

	Year	Citations
Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001) Y. W. Mo, D. E. Savage, B. S. Swartzentruber, Physical Review Letters EngineeringCrystal Growth TechnologySilicon On InsulatorKinetic PathTunneling Microscopy	1990	1.4K
Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces B. S. Swartzentruber, Y. W. Mo, M. B. Webb, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon On InsulatorMicroscopy ObservationsTunneling MicroscopySilicene	1989	361
Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy B. S. Swartzentruber Physical Review Letters Room TemperatureDiffusion EventEngineeringPhysicsMicroscopy	1996	342
Direct determination of step and kink energies on vicinal Si(001) B. S. Swartzentruber, Y. W. Mo, R. Kariotis, Physical Review Letters EngineeringTunneling MicroscopyPhysicsMicroscopyMicrofabrication	1990	339
Growth and equilibrium structures in the epitaxy of Si on Si(001) Y. W. Mo, B. S. Swartzentruber, R. Kariotis, Physical Review Letters EngineeringEquilibrium StructuresSilicon On InsulatorSubmonolayer GrowthLateral Accommodation Coefficient	1989	320
Atomic-scale surface modifications using a tunnelling microscope R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber Nature EngineeringTunnelling MicroscopePhysicsMicroscopyTunneling Microscopy	1987	313
Electron Interferometry at Crystal Surfaces R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber Physical Review Letters EngineeringMicroscopyElectron DiffractionElectron InterferometryTunneling Microscopy	1985	240
Real-Space Observation of Surface States on Si(111) 7×7 with the Tunneling Microscope R. S. Becker, J. A. Golovchenko, D. R. Hamann, Physical Review Letters EngineeringTunneling MicroscopySuperconductivityTunneling MicroscopeSilicene	1985	238
Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy R. S. Becker, B. S. Swartzentruber, J. S. Vickers, Physical review. B, Condensed matter Materials ScienceSemiconductorsSurface CharacterizationEngineeringTunneling Microscopy	1989	230
Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber Physical Review Letters EngineeringMicroscopyGermanium LayersMolecular-beam EpitaxyTunneling Microscopy	1985	201

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