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Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

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Citations

15

References

1990

Year

Abstract

The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of ``macroscopic'' Ge islands.

References

YearCitations

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