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Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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15
References
1990
Year
EngineeringCrystal Growth TechnologySilicon On InsulatorKinetic PathTunneling MicroscopySiliceneEpitaxial GrowthCluster PhaseMaterials EngineeringMaterials ScienceCluster SciencePhysicsPhysical ChemistryMicrostructureSurface ScienceApplied PhysicsCondensed Matter PhysicsKinetic PathwayMetastable 3DChemical KineticsGermanene
The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of ``macroscopic'' Ge islands.
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