R. M. Sieg

Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µm

K.D. Choquette, John F. Klem, A. J. Fischer et al. · Electronics Letters · 2000 · 251 citations · Full text

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

S. R. Kurtz, Andrew A. Allerman, C. H. Seager et al. · Applied Physics Letters · 2000 · 163 citations · Full text

Categoryquantum Electronics, Engineering, Compensated Ingaasn +18

Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

R. M. Sieg, Steven A. Ringel, S. M. Ting et al. · Journal of Electronic Materials · 1998 · 104 citations

Electrical Engineering, Engineering, Applied Physics +6

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

S. R. Kurtz, John F. Klem, Andrew A. Allerman et al. · Applied Physics Letters · 2002 · 99 citations

Semiconductors, Hall Mobilities, Epitaxial Growth +15

High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

R. M. Sieg, John A. Carlin, John Boeckl et al. · Applied Physics Letters · 1998 · 77 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13