John Boeckl

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev et al. · Applied Physics Letters · 2017 · 167 citations

Engineering, Laser Deposition, Optoelectronic Devices +17

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

Jeong-Ho Park, W. C. Mitchel, Lawrence Grazulis et al. · Advanced Materials · 2010 · 128 citations

Towards High‐Mobility Heteroepitaxial β‐Ga₂O₃ on Sapphire − Dependence on The Substrate Off‐Axis Angle

Subrina Rafique, Lu Han, Adam T. Neal et al. · physica status solidi (a) · 2017 · 119 citations

Materials Science, Engineering, Physics +15

Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

C. Andre, John Boeckl, David M. Wilt et al. · Applied Physics Letters · 2004 · 98 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Graphene Quantum Dots Electrochemistry and Sensitive Electrocatalytic Glucose Sensor Development

Sanju Gupta, Tyler Smith, Alexander Banaszak et al. · Nanomaterials · 2017 · 98 citations · Full text