Applied Physics Letters · 2017 · 170 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsConductive MaterialsDopingSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesCarrier ConcentrationConductivityConductivity In Thin FilmsDoping In Thin FilmsHall Effect MeasurementsHomoepitaxial GrowthPulsed Laser DepositionSemiconductor Conductivity
Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (201¯) orientation. An average conductivity of 732 S cm−1 with a mobility of 26.5 cm2 V−1 s−1 and a carrier concentration of 1.74 × 1020 cm−3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.
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Deep-ultraviolet transparent conductive β-Ga2O3 thin films
Masahiro Orita, Hiromichi Ohta, Masahiro Hirano et al. · Applied Physics Letters · 2000 · 996 citations
Natural Sciences, Materials Engineering, Materials Science +17
Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 719 citations