Stephen E. Tetlak

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Andrew J. Green, Kelson D. Chabak, Eric R. Heller et al. · IEEE Electron Device Letters · 2016 · 560 citations

Natural Sciences, Materials Engineering, Materials Science +8

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 366 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +15

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Kelson D. Chabak, Jonathan P. McCandless, Andrew J. Green et al. · IEEE Electron Device Letters · 2017 · 259 citations

Engineering, Electrical Engineering, Materials Engineering +17

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev et al. · Applied Physics Letters · 2017 · 170 citations

Natural Sciences, Materials Engineering, Materials Science +17

Implementation of High-Power-Density &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$X$ &lt;/tex-math&gt;&lt;/inline-formula&gt;-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

Robert Fitch, Dennis E. Walker, Andrew J. Green et al. · IEEE Electron Device Letters · 2015 · 67 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16