Andrew A. Allerman

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

S. R. Kurtz, Andrew A. Allerman, E. D. Jones et al. · Applied Physics Letters · 1999 · 537 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

S. R. Lee, A. M. West, Andrew A. Allerman et al. · Applied Physics Letters · 2005 · 291 citations

Natural Sciences, Materials Engineering, Materials Science +17

Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Y. Xi, Jingtian Xi, Th. Gessmann et al. · Applied Physics Letters · 2005 · 198 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

A. J. Fischer, Andrew A. Allerman, Mary H. Crawford et al. · Applied Physics Letters · 2004 · 164 citations

Engineering, Electrical Engineering, Materials Science +16

Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

R. Mair, J. Y. Lin, H. X. Jiang et al. · Applied Physics Letters · 2000 · 163 citations · Full text

Engineering, Materials Engineering, Materials Science +17