M. Dahlstrǒm

Statistics

Publications

Citations

687

H-Index

Active since

2001

Affiliations

University of California, Santa Barbara(Current)

Rockwell Automation (United States)

IBM (United States)

IQE (United States)

Jet Propulsion Laboratory

M. Dahlstrǒm is an author at University of California, Santa Barbara specializing in electrical engineering, high-frequency semiconductor devices, and engineering.

Publications per year

2001–2006

Publications

Submicron scaling of HBTs

M.J.W. Rodwell, Miguel Urteaga, T. Mathew et al. · IEEE Transactions on Electron Devices · 2001 · 177 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

Y.M. Kim, M. Dahlstrǒm, Sang‐Ho Lee et al. · IEEE Electron Device Letters · 2002 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers

V. Paidi, Zach Griffith, Yun Wei et al. · IEEE Transactions on Microwave Theory and Techniques · 2005 · 60 citations

Engineering, Electrical Engineering, Microelectronics +16

Wideband DHBTs using a graded carbon-doped InGaAs base

M. Dahlstrǒm, X. M. Fang, D. Lubyshev et al. · IEEE Electron Device Letters · 2003 · 42 citations

Engineering, Electrical Engineering, Materials Science +16

Thermal Limitations of InP HBTs in 80- and 160-Gb ICs

I. Harrison, M. Dahlstrǒm, S. Krishnan et al. · IEEE Transactions on Electron Devices · 2004 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +17

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