J. Bergman

An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

J.B. Hacker, J. Bergman, G. Nagy et al. · IEEE Microwave and Wireless Components Letters · 2004 · 79 citations

Monolithic integration of InP-based transistors on Si substrates using MBE

W.K. Liu, D. Lubyshev, J. M. Fastenau et al. · Journal of Crystal Growth · 2008 · 59 citations

Electrical Engineering, Wafer Scale Processing, Engineering +9

Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

G.J. Sullivan, Amal Ikhlassi, J. Bergman et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 58 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

T.E. Kazior, J. R. LaRoche, D. Lubyshev et al. · 2009 · 38 citations

Electrical Engineering, Engineering, Three-dimensional Heterogeneous Integration +12

An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

J.B. Hacker, J. Bergman, G. Nagy et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 37 citations

Electrical Engineering, Engineering, Rf Semiconductor +7