Amal Ikhlassi

Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

G.J. Sullivan, Amal Ikhlassi, J. Bergman et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 58 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Temperature Dependence of Magnetotransport in Extraordinary Magnetoresistance Devices

Thomas D. Boone, L. Folks, J. A. Katine et al. · IEEE Transactions on Magnetics · 2006 · 57 citations

Engineering, Low-dimensional Magnetism, Magnetic Materials +20

512$\,\times\,$512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices

Dennis T. Norton, J. T. Olesberg, Rodney McGee et al. · IEEE Journal of Quantum Electronics · 2013 · 38 citations

Engineering, Optoelectronic Devices, Luminescence Property +17

LWIR Strained-Layer Superlattice Materials and Devices at Teledyne Imaging Sensors

Andrew Hood, A. Evans, Amal Ikhlassi et al. · Journal of Electronic Materials · 2010 · 35 citations

Materials Engineering, Materials Science, Material Analysis +7

Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias

J. Bergman, G. Nagy, Gerard Sullivan et al. · 2004 · 23 citations

Low-power Electronics, Mv Drain Bias, Electrical Engineering +13