J. R. LaRoche - Concepedia

Author

J. R. LaRoche

Also Known As

J Laroche, J. LaRoche, J. Laroche, J. R LaRoche, J. R. LaRoche, J. R. Laroche, J.R LaRoche, J.R. LaRoche, J.R. Laroche, Jeffery R. LaRoche

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

University of Florida RTX (United States)Massachusetts Institute of Technology Soitec (France)Sandia National Laboratories

About

J. R. LaRoche is an author at University of Florida specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	24	1.5K
2	Applied Physics	17	21	1.4K
3	Chemical Engineering	2	2	101
4	Computer Engineering	2	2	106
5	Chemistry	1	1	32

J. R. LaRoche

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
ZnO nanowire growth and devices Young-Woo Heo, D. P. Norton, Li‐Chia Tien, Materials Science and Engineering R Reports Nanoscale SystemEngineeringNanomaterialsNanotechnologyOxide Electronics	2004	574
Pt ∕ ZnO nanowire Schottky diodes Young-Woo Heo, Li‐Chia Tien, D. P. Norton, Applied Physics Letters SemiconductorsElectrical EngineeringElectronic DevicesEngineeringElectronic Materials	2004	136
Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO K. Ip, Young-Woo Heo, Kwang Hyeon Baik, Applied Physics Letters Materials ScienceElectrical EngineeringSchottky Barrier HeightEngineeringMaterial Analysis	2004	90
Zn 0.9 Mg 0.1 O ∕ ZnO p – n junctions grown by pulsed-laser deposition K. Ip, Young-Woo Heo, D. P. Norton, Applied Physics Letters	2004	88
Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit W. E. Hoke, R.V. Chelakara, John Bettencourt, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringDevice IntegrationRf SemiconductorNanoelectronics	2011	85
Oxygen diffusion into SiO2-capped GaN during annealing S. J. Pearton, H. Cho, J. R. LaRoche, Applied Physics Letters Materials ScienceSio 2Wide-bandgap SemiconductorEngineeringO17 Diffusion Profiles	1999	79
Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning K. Ip, A. H. Onstine, E. S. Lambers, Applied Physics Letters Materials ScienceSurface CharacterizationChemical EngineeringSchottky Barrier HeightEngineering	2004	69
Monolithic integration of InP-based transistors on Si substrates using MBE W.K. Liu, D. Lubyshev, J. M. Fastenau, Journal of Crystal Growth Electrical EngineeringWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)Device Integration	2008	59
Design of edge termination for GaN power Schottky diodes J. R. LaRoche, F. Ren, K. W. Baik, Journal of Electronic Materials Electrical EngineeringEngineeringApplied PhysicsPower Semiconductor DeviceGan Power Device	2005	42
InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor P.C. Chang, Albert G. Baca, N. Y. Li, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2000	41

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