R.V. Chelakara

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, R.V. Chelakara, John Bettencourt et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 88 citations

Engineering, Electrical Engineering, Materials Engineering +17

Mechanisms of deformation-induced grain boundary chromium depletion (sensitization) development in type 316 stainless steels

A.H. Advani, L.E. Murr, D.G. Atteridge et al. · Metallurgical Transactions A · 1991 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +14

High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate

T.E. Kazior, R.V. Chelakara, W. E. Hoke et al. · 2011 · 49 citations

Engineering, Electrical Engineering, Microelectronics +16

High-finesse resonant-cavity photodetectors with an adjustable resonance frequency

S.S. Murtaza, I.-H. Tan, John E. Bowers et al. · Journal of Lightwave Technology · 1996 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

An InAlAs/InGaAs metal-oxide-semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer

Piotr Grudowski, R.V. Chelakara, Russell D. Dupuis · Applied Physics Letters · 1996 · 23 citations · Full text

Engineering, Electrical Engineering, Materials Science +17