I.-H. Tan - Concepedia

Concepedia

Author

I.-H. Tan

University of California, Santa Barbara

Also Known As

I-H. Tan, I. -H. Tan, I. H. Tan, I. Tan, I.-H. Tan, I.-Hsing Tan, I.H. Tan

33

Publications

1.6K

Citations

11

H-Index

30

Concepts

All Affiliations

University of California, Santa Barbara Hewlett-Packard (United States)Trimble (United States)The University of Texas at Austin

IT

About

I.-H. Tan is an author at University of California, Santa Barbara specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	1.6K
2	Applied Physics	11	11	1.6K
3	Electrical Engineering	9	9	1.5K
4	Materials Science	4	4	170
5	Materials Engineering	1	1	68

I.-H. Tan

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12

Publications

1.6K

Citations

11

H-Index

	Year	Citations
A self-consistent solution of Schrödinger–Poisson equations using a nonuniform mesh I.-H. Tan, Gregory L. Snider, Lina Chang, Journal of Applied Physics Numerical AnalysisCategoryquantum ElectronicsElectrical EngineeringElliptic EquationEngineering	1990	729
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting &gt;50% external quantum efficiency Michael R. Krames, Mari Ochiai-Holcomb, G. E. Höfler, Applied Physics Letters Optical MaterialsEngineeringHigh-power Truncated-inverted-pyramidOptoelectronic DevicesIntegrated Circuits	1999	453
Electron states in mesa-etched one-dimensional quantum well wires Gregory L. Snider, I.-H. Tan, Evelyn L. Hu Journal of Applied Physics Quantum ScienceElectrical EngineeringElectron StatesQuantum ComputingPhysics	1990	118
High-brightness AlGaInP light emitting diodes D. A. Vanderwater, I.-H. Tan, G. E. Höfler, Proceedings of the IEEE Materials EngineeringPhotonicsElectrical EngineeringMaterials ScienceLuminous Efficiency	1997	68
Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers G. E. Höfler, D. A. Vanderwater, D.C. DeFevere, Applied Physics Letters Materials Science50-Nm Diameter WafersElectrical EngineeringOptical MaterialsEngineering	1996	60
High-finesse resonant-cavity photodetectors with an adjustable resonance frequency S.S. Murtaza, I.-H. Tan, John E. Bowers, Journal of Lightwave Technology Photonic DevicePhotonicsElectrical EngineeringEngineeringOptical Properties	1996	33
Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers I.-H. Tan, D. A. Vanderwater, James Huang, Journal of Electronic Materials Materials ScienceElectrical EngineeringSolid-state LightingEngineeringWafer Scale Processing	2000	25
Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/ Uma Bhattacharya, M.J. Mondry, G. Hurtz, IEEE Electron Device Letters SemiconductorsHigh F/sub Max/Electrical EngineeringElectronic DevicesSubmicron Dimensions	1995	23
Interaction mechanisms of near-surface quantum wells with oxidized and H-passivated AlGaAs surfaces Valentina Emiliani, B. Bonanni, Carlo Presilla, Journal of Applied Physics Near-surface Quantum WellsWide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductors	1994	17
Large subband spacings in δ-doped quantum wires Gregory L. Snider, I.-H. Tan, Evelyn L. Hu Journal of Applied Physics Categoryquantum ElectronicsQuantum ScienceEngineeringPhysicsδ-Doped Layers	1990	14

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