W. E. Hoke

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

J.W. Chung, W. E. Hoke, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2010 · 375 citations

Wide-bandgap Semiconductor, Electrical Engineering, Recessed Algan Barrier +10

Phonon scattering in strained transition layers for GaN heteroepitaxy

Jungwan Cho, Yiyang Li, W. E. Hoke et al. · Physical Review B · 2014 · 120 citations

Semiconductors, Semiconductor Technology, Strained Transition Layers +10

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

W. E. Hoke, P. J. Lemonias, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 94 citations

Wide-bandgap Semiconductor, Engineering, Double Pulse +19

Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

Mark Somerville, Jesús A. del Alamo, W. E. Hoke · IEEE Electron Device Letters · 1996 · 86 citations

Inalas-ingaas Hemts, Electrical Engineering, Inalas/ingaas Hemts +11

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, R.V. Chelakara, John Bettencourt et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 85 citations

Wide-bandgap Semiconductor, Engineering, Device Integration +17