J. J. Mosca

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

W. E. Hoke, P. J. Lemonias, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 94 citations

Wide-bandgap Semiconductor, Engineering, Double Pulse +19

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, R.V. Chelakara, John Bettencourt et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 85 citations

Wide-bandgap Semiconductor, Engineering, Device Integration +17

Growth and characterization of metamorphic Inx(AlGa)1−xAs/InxGa1−xAs high electron mobility transistor material and devices with X=0.3–0.4

W. E. Hoke, P. S. Lyman, C.S. Whelan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions

W. E. Hoke, A. Torabi, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 32 citations

Aluminium Nitride, Thermodynamic Analysis, Engineering +17

AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy

W. E. Hoke, T. D. Kennedy, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 20 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8