P. S. Lyman

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

W. E. Hoke, P. J. Lemonias, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 94 citations

Wide-bandgap Semiconductor, Engineering, Double Pulse +19

Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

C.S. Whelan, W.F. Hoke, R.A. McTaggart et al. · IEEE Electron Device Letters · 2000 · 53 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications

Jong‐Chin Huang, P. Saledas, J.P. Wendler et al. · IEEE Electron Device Letters · 1993 · 40 citations

Wide-bandgap Semiconductor, Engineering, Integrated Circuits +17

Room- and high-pressure crystal chemistry of CoAs and FeAs

P. S. Lyman, C. T. Prewitt · Acta Crystallographica Section B Structural Science · 1984 · 39 citations

Materials Science, Inorganic Chemistry, X-ray Crystallography +13

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

C.S. Whelan, T.E. Kazior, P.F. Marsh et al. · IEEE Journal of Solid-State Circuits · 2000 · 38 citations

Electrical Engineering, Mhemt Device, Engineering +12