R.A. McTaggart

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

W. E. Hoke, P. J. Lemonias, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 94 citations

Engineering, Electrical Engineering, Materials Science +17

Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

C.S. Whelan, W.F. Hoke, R.A. McTaggart et al. · IEEE Electron Device Letters · 2000 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

C.S. Whelan, T.E. Kazior, P.F. Marsh et al. · IEEE Journal of Solid-State Circuits · 2000 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications

C.S. Whelan, P.F. Marsh, W. E. Hoke et al. · 2002 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Low noise metamorphic HEMT devices and amplifiers on GaAs substrates

P.F. Marsh, S.L.G. Chu, S.M. Lardizabal et al. · 2003 · 20 citations

Engineering, Electrical Engineering, Microelectronics +16