C.S. Whelan

Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

C.S. Whelan, W.F. Hoke, R.A. McTaggart et al. · IEEE Electron Device Letters · 2000 · 53 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

High-resolution silicon patterning with self-assembled monolayer resists

Michael J. Lercel, C.S. Whelan, H. G. Craighead et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 53 citations

Engineering, Polycrystalline Silicon Films, Pattern Transfer +19

High indium metamorphic HEMT on a GaAs substrate

W. E. Hoke, T. D. Kennedy, A. Torabi et al. · Journal of Crystal Growth · 2003 · 44 citations

Electrical Engineering, Engineering, Rf Semiconductor +2

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

C.S. Whelan, T.E. Kazior, P.F. Marsh et al. · IEEE Journal of Solid-State Circuits · 2000 · 38 citations

Electrical Engineering, Mhemt Device, Engineering +12

High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists

D. W. Carr, Michael J. Lercel, C.S. Whelan et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 38 citations

Novel Processes, Engineering, Electron-beam Lithography +20