C.S. Whelan - Concepedia

Author

C.S. Whelan

RTX (United States)

Also Known As

C. S. WHELAN, C. S. Whelan, C.S Whelan, C.S. Whelan, Colin S. Whelan, Colin Whelan, Whelan, C. S., Whelan, C.S.

Publications

655

Citations

H-Index

Concepts

All Affiliations

RTX (United States)Advanced Device Technology (United States)University of Illinois Urbana-Champaign Pennsylvania State University Houston Methodist

About

C.S. Whelan is an author at RTX (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	560
2	Applied Physics	13	18	499
3	Electrical Engineering	13	17	414
4	Chemical Engineering	1	1	24
5	Chemistry	1	1	24

C.S. Whelan

Publications

590

Citations

H-Index

Page 1

	Year	Citations
Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density C.S. Whelan, W.F. Hoke, R.A. McTaggart, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringμM T-gate Mhemt	2000	53
High-resolution silicon patterning with self-assembled monolayer resists Michael J. Lercel, C.S. Whelan, H. G. Craighead, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringPolycrystalline Silicon FilmsPattern TransferOptoelectronic DevicesIntegrated Circuits	1996	53
High indium metamorphic HEMT on a GaAs substrate W. E. Hoke, T. D. Kennedy, A. Torabi, Journal of Crystal Growth Electrical EngineeringEngineeringRf SemiconductorApplied PhysicsGaas Substrate	2003	44
Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates C.S. Whelan, T.E. Kazior, P.F. Marsh, IEEE Journal of Solid-State Circuits Electrical EngineeringMhemt DeviceEngineeringMillimeter Wave TechnologyGaas Substrates	2000	38
High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists D. W. Carr, Michael J. Lercel, C.S. Whelan, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Novel ProcessesEngineeringElectron-beam LithographyPattern TransferElectron Diffraction	1997	38
GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications C.S. Whelan, P.F. Marsh, W. E. Hoke, Electrical EngineeringMillimeter Wave TechnologyEngineeringAmplifier PerformanceRf Semiconductor	2002	35
Growth and characterization of metamorphic Inx(AlGa)1−xAs/InxGa1−xAs high electron mobility transistor material and devices with X=0.3–0.4 W. E. Hoke, P. S. Lyman, C.S. Whelan, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials EngineeringMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	2000	35
Improved electron-beam patterning of Si with self-assembled monolayers C.S. Whelan, Michael J. Lercel, H. G. Craighead, Applied Physics Letters EngineeringSelf-assembled MonolayersElectron-beam LithographyOptoelectronic DevicesIntegrated Circuits	1996	31
Properties of metamorphic materials and device structures on GaAs substrates W. E. Hoke, T. D. Kennedy, A. Torabi, Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsMetamorphic MaterialsSemiconductor Material	2003	30
Reliability of metamorphic HEMTs on GaAs substrates P.F. Marsh, C.S. Whelan, W. E. Hoke, Microelectronics Reliability Electrical EngineeringRf SemiconductorMetamorphic Hemts	2002	30

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