T. D. Kennedy

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, R.V. Chelakara, John Bettencourt et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 85 citations

Wide-bandgap Semiconductor, Engineering, Device Integration +17

High indium metamorphic HEMT on a GaAs substrate

W. E. Hoke, T. D. Kennedy, A. Torabi et al. · Journal of Crystal Growth · 2003 · 44 citations

Electrical Engineering, Engineering, Rf Semiconductor +2

Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions

W. E. Hoke, A. Torabi, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 32 citations

Aluminium Nitride, Thermodynamic Analysis, Engineering +17

Properties of metamorphic materials and device structures on GaAs substrates

W. E. Hoke, T. D. Kennedy, A. Torabi et al. · Journal of Crystal Growth · 2003 · 30 citations

Materials Science, Engineering, Applied Physics +4

Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, T. D. Kennedy et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 23 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +17