T. D. Kennedy

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, R.V. Chelakara, John Bettencourt et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 88 citations

Engineering, Electrical Engineering, Materials Engineering +17

High indium metamorphic HEMT on a GaAs substrate

W. E. Hoke, T. D. Kennedy, A. Torabi et al. · Journal of Crystal Growth · 2003 · 44 citations

Engineering, Electrical Engineering, Materials Science +9

Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions

W. E. Hoke, A. Torabi, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +17

Properties of metamorphic materials and device structures on GaAs substrates

W. E. Hoke, T. D. Kennedy, A. Torabi et al. · Journal of Crystal Growth · 2003 · 30 citations

Engineering, Electrical Engineering, Materials Science +16

Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, T. D. Kennedy et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 23 citations

Engineering, Electrical Engineering, Materials Science +17