A. Torabi

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

W. E. Hoke, P. J. Lemonias, J. J. Mosca et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 94 citations

Wide-bandgap Semiconductor, Engineering, Double Pulse +19

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, R.V. Chelakara, John Bettencourt et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 85 citations

Wide-bandgap Semiconductor, Engineering, Device Integration +17

Kinetics of the reaction OH + SO2 + M .fwdarw. HOSO2 + M. Temperature and pressure dependence in the fall-off region

P. H. Wine, Robin Thompson, A. R. Ravishankara et al. · The Journal of Physical Chemistry · 1984 · 72 citations

Chemical Engineering, Pressure Dependence, Engineering +13

Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces

J. D. Benson, B. K. Wagner, A. Torabi et al. · Applied Physics Letters · 1986 · 71 citations

Engineering, Surface Stoichiometry, Te Desorption +18

Transverse magnetic field dependence of the current-voltage characteristics of double-barrier quantum well tunneling structures

S. Ben Amor, K. P. Martin, J. J. L. Rascol et al. · Applied Physics Letters · 1988 · 51 citations

Wide-bandgap Semiconductor, Quantum Science, Electrical Engineering +14