Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces

Abstract

Reflection high-energy electron diffraction desorption studies have been performed on epitaxial (001) CdTe surfaces. Both Cd and Te desorption from CdTe were observed to follow a simple first order rate law. Activation energies of 1.95 and 7.70 eV were found for Te and Cd, respectively, on the CdTe surface. The congruent evaporation temperature was determined to be 340 °C. Under normal growth conditions (a substrate temperature of 300 °C and growth rate of 1 μm/h) a Te-stabilized surface of (001) CdTe was found. The implications of these findings on high-quality crystalline growth are discussed.