Kwang Hyeon Baik

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

B. S. Kang, S. Kim, F. Ren et al. · Applied Physics Letters · 2004 · 116 citations

Pressure-induced Changes, Membrane Structure, Electrical Engineering +13

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

B. S. Kang, S. Kim, J. Kim et al. · Applied Physics Letters · 2003 · 111 citations

Materials Science, Tensile Strain, Electrical Engineering +10

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

Byung-Jae Kim, Chongmin Lee, Younghun Jung et al. · Applied Physics Letters · 2011 · 106 citations

Graphene Nanomeshes, Electrical Engineering, Electronic Devices +15

Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Hyunsoo Kim, Kyoung-Kook Kim, Kwang-Ki Choi et al. · Applied Physics Letters · 2007 · 96 citations

White Oled, Photonics, Electrical Engineering +13

Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

K. Ip, Young-Woo Heo, Kwang Hyeon Baik et al. · Applied Physics Letters · 2004 · 90 citations

Materials Science, Electrical Engineering, Schottky Barrier Height +12