Applied Physics Letters · 2007 · 96 citations · 11 references
EngineeringElectrical EngineeringMaterials EngineeringElectronic MaterialsOptoelectronicsSemiconductor DevicesIntegrated Circuit DesignLight SourcesLight-emitting DiodesSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting Diode MaterialsPower Conversion EfficiencyPower EfficiencyPower Efficiency OptimizationVertical Light-emitting Diodes
The authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes (LEDs) with vertical-injection geometry. Based on the analyses of LED test patterns fabricated with various n-electrode dimensions, a design rule for vertical LEDs is proposed. It is found that the suppression of the vertical current under n electrodes and the efficient injection of the spreading current across the n layers are essential to fabricate high-efficiency LEDs. Introduction of the current blocking layer along with well-designed branched n electrodes results in a large enhancement of power efficiency by a factor of 1.9, compared with that of reference LEDs.
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High performance thin-film flip-chip InGaN–GaN light-emitting diodes
O.B. Shchekin, J. E. Epler, T. A. Trottier et al. · Applied Physics Letters · 2006 · 335 citations