Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

Byung-Jae Kim, Chongmin Lee, Younghun Jung, +5

Applied Physics Letters

Graphene NanomeshesElectrical EngineeringElectronic DevicesOptical MaterialsElectronic Materials +13

Three-Dimensional Multilayered Nanostructures with Controlled Orientation of Microdomains from Cross-Linkable Block Copolymers

Hyun-Jung Jung, Dongjune Hwang, Eunhye Kim, +8

ACS Nano

Materials ScienceBlock Co-polymersEngineeringNanomaterialsControlled Orientation +13

Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes

Byung-Jae Kim, Gwangseok Yang, Min Joo Park, +4

Applied Physics Letters

EngineeringOptoelectronic DevicesGraphene NanomeshesGraphene-based Nano-antennasElectronic Devices +16

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes

Byung-Jae Kim, Michael A. Mastro, Jennifer K. Hite, +2

Optics Express

Graphene NanomeshesElectrical EngineeringGraphene Quantum DotEngineeringGraphene-based Nano-antennas +10

Fabrication of GaAs subwavelength structure (SWS) for solar cell applications

Byung-Jae Kim, Jihyun Kim

Optics Express

EngineeringAverage ReflectanceNanosphere LithographyPlasmon-enhanced PhotovoltaicsPhotovoltaics +16

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Byung-Jae Kim, Chongmin Lee, Michael A. Mastro, +5

Applied Physics Letters

Graphene NanomeshesElectrical EngineeringEngineeringCarbon-based MaterialNanoelectronics +11

Energy and dose dependence of proton-irradiation damage in graphene

Gwangseok Yang, Byung-Jae Kim, Kyeounghak Kim, +2

RSC Advances

Graphene NanomeshesGraphene Quantum DotEngineeringPhysicsMonolayer Graphene +7

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Byung-Jae Kim, Michael A. Mastro, Hyun-Jung Jung, +7

Thin Solid Films

Electrical EngineeringSolid-state LightingEngineeringNanoelectronicsFlip-chip Gan +9

Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

Shihyun Ahn, Byung-Jae Kim, Yi-Hsuan Lin, +5

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Wide-bandgap SemiconductorElectrical EngineeringProton Irradiation DoseEngineeringSemiconductor Device +9

Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes Using Graded-Refractive-Index Layer by SiO[sub 2] Nanosphere Lithography

Byung-Jae Kim, Joona Bang, Sung Hyun Kim, +1

Journal of The Electrochemical Society

EngineeringLuminescence PropertyOptical PropertiesLight-emitting DiodesGan Layer +14