A.F. Allen

Statistics

Publications

Citations

126

H-Index

Active since

2003

Affiliations

General Electric (United States)(Current)

Lockheed Martin (United States)

Cornell University

A.F. Allen is an author at General Electric (United States) specializing in materials science, silicon carbide (sic) materials, and gan-based high-frequency devices.

Publications per year

2003–2016

Publications

Microwave power SiC MESFETs and GaN HEMTs

A.P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Solid-State Electronics · 2003 · 49 citations

Engineering, Electrical Engineering, Materials Science +14

9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

A.P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Electronics Letters · 2003 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

The role of mid-band gap defect levels in persistent photoconductivity in RF sputtered SnO2 thin films

Paul Tierney, T.J. Ennis, A.F. Allen et al. · Thin Solid Films · 2016 · 23 citations

Natural Sciences, Materials Science, Physics +16

Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses

A.P. Zhang, E.B. Kaminsky, A.F. Allen et al. · Electronics Letters · 2004 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

A. P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Journal of Electronic Materials · 2003 · 10 citations

Engineering, Electrical Engineering, Materials Science +14

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