Microwave power SiC MESFETs and GaN HEMTs

Trapping effects in GaN and SiC microwave FETs

S.C. Binari, P. B. Klein, T.E. Kazior · Proceedings of the IEEE · 2002 · 454 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

V. Tilak, B. Green, V. Kaper et al. · IEEE Electron Device Letters · 2001 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

Wide bandgap semiconductor transistors for microwave power amplifiers

R.J. Trew · IEEE Microwave Magazine · 2000 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · 2003 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

Karen Moore, C.E. Weitzel, Kevin J. Nordquist et al. · IEEE Electron Device Letters · 1997 · 51 citations

Engineering, Electrical Engineering, Microelectronics +16