R.J. Trew

The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications

R.J. Trew, J.B. Yan, P. Möck · Proceedings of the IEEE · 1991 · 359 citations

SiC and GaN transistors - is there one winner for microwave power applications?

R.J. Trew · Proceedings of the IEEE · 2002 · 209 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

AlGaN/GaN HFET reliability

R.J. Trew, Daniel Green, J.B. Shealy · IEEE Microwave Magazine · 2009 · 154 citations

Reliability, Wide-bandgap Semiconductor, Electrical Engineering +12

Silicon Carbide Electronic Materials and Devices

Michael A. Capano, R.J. Trew · MRS Bulletin · 1997 · 148 citations

Materials Engineering, Materials Science, Electronic Devices +4

Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

L.‐W. Yin, You Mi Hwang, J.H. Lee et al. · IEEE Electron Device Letters · 1990 · 132 citations

Lt Gaas, Semiconductor Technology, Electrical Engineering +13