J.B. Shealy - Concepedia

Author

J.B. Shealy

Advanced Micro Devices (United States)

Also Known As

J. B. Shealy, J. Shealy, J.B Shealy, J.B. Shealy, Jeffrey B. Shealy, Jeffrey Shealy, Shealy, J. B.

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Advanced Micro Devices (United States)HRL Laboratories (United States)University of California, Santa Barbara North Carolina State University Wright-Patterson Air Force Base

About

J.B. Shealy is an author at Advanced Micro Devices (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	32	1.1K
2	Applied Physics	17	25	929
3	Electrical Engineering	17	25	955
4	Biomedical Engineering	1	1	25
5	Chemical Engineering	1	1	16

J.B. Shealy

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
AlGaN/GaN HFET reliability R.J. Trew, Daniel Green, J.B. Shealy IEEE Microwave Magazine ReliabilityWide-bandgap SemiconductorElectrical EngineeringEngineeringAlgan Layer Adjacent	2009	154
History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond David Runton, Brian Trabert, J.B. Shealy, IEEE Microwave Magazine Wide-bandgap SemiconductorElectrical EngineeringEngineeringEarly 1990SRf Semiconductor	2013	109
Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs R.J. Trew, Yueying Liu, L. S. Bilbro, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringField-effect Transistors	2006	97
A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at X and Ku Band Ramakrishna Vetury, Abhay Kochhar, Jeff Leathersich, Materials ScienceElectrical EngineeringNext Generation ResonatorEngineeringOvertone Mode	2023	57
High Power, Wideband Single Crystal XBAW Technology for sub-6 GHz Micro RF Filter Applications Ramakrishna Vetury, Michael D. Hodge, J.B. Shealy Materials EngineeringElectrical EngineeringPvd Ain XbawEngineeringRadio Frequency	2018	54
Low loss, 3.7GHz wideband BAW filters, using high power single crystal AlN-on-SiC resonators J.B. Shealy, Ramakrishna Vetury, Shawn R. Gibb, Aluminium NitrideEngineeringAcoustic MetamaterialThin Film Process TechnologyRf Semiconductor	2017	48
Highly Doped AlScN 3.5 GHz XBAW Resonators with 16% k2eff for 5G RF Filter Applications Craig Moe, Roy H. Olsson, Pinal Patel, Millimeter Wave TechnologyEngineeringPhysicsPhysical AcousticAcoustic Metamaterial	2020	46
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs) J.B. Shealy, J. Smart, J. R. Shealy IEEE Microwave and Wireless Components Letters Electrical EngineeringEngineeringRf SemiconductorOscillatorsMeasured Phase Noise	2001	44
452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon Yuhua Shen, Pinal Patel, R. Vetury, Aluminium NitrideEngineeringAcoustic MetamaterialElectromagnetic CompatibilityAluminum Nitride	2019	39
High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications R. Vetury, Ying Wei, D.S. Green, IEEE MTT-S International Microwave Symposium Digest, 2005. Wide-bandgap SemiconductorEngineeringPower ElectronicsRf SemiconductorField Modulation Plates	2005	38

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