David Runton

History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond

David Runton, Brian Trabert, J.B. Shealy et al. · IEEE Microwave Magazine · 2013 · 109 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Envelope-domain time series (ET) behavioral model of a Doherty RF power amplifier for system design

John Wood, Michael LeFevre, David Runton et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 44 citations

Wireless Communications, Electrical Engineering, Microwave Device Modeling +15

A 900 MHz, 500 W Doherty Power Amplifier Using Optimized Output Matched Si LDMOS Power Transistors

Christopher T. Burns, Allen Chang, David Runton · IEEE MTT-S International Microwave Symposium digest · 2007 · 20 citations

Electrical Engineering, Mhz Doherty Amplifier, Engineering +7