IEEE Electron Device Letters · 1997 · 51 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsBiasesCurrent DensityLarge-signal BehaviorPower DensityPower Density EnhancementSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide High-frequency Devices
4H-SiC MESFET's on conducting substrates were fabricated and characterized for large-signal performance over a wide range of gate and drain biases. At V/sub ds/=25 V the current density was 225 mA/mm and the peak f/sub max/ for these devices was 16 GHz. At V/sub ds/=50 V and I/sub dq/=50% I/sub dss/, the power density was 3.3 W/mm at 850 MHz. At V/sub ds/=40 V and I/sub dq/=5% I/sub dss/, the power added efficiency was 65.7%, which is the highest ever reported for a SiC MESFET. This is the first Class B data presented for a SiC MESFET.
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4H-SiC MESFET's with 42 GHz f/sub max/
S. Sriram, G. Augustine, Albert A. Burk et al. · IEEE Electron Device Letters · 1996 · 70 citations
High efficiency operation of 6-H SiC MESFETs at 6 GHz
S. Sriram, R.R. Barron, A.W. Morse et al. · 2002 · 12 citations