F.H. Doerbeck

GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

W. V. McLevige, Huihua Yuan, W. M. Duncan et al. · IEEE Electron Device Letters · 1982 · 33 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Optimization of GaAs power MESFET device and material parameters for 15-GHz operation

H. M. Macksey, F.H. Doerbeck, R.C. Vail · IEEE Transactions on Electron Devices · 1980 · 16 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

Fabrication and High-Temperature Characteristics of Ion-Implanted GaAs Bipolar Transistors and Ring-Oscillators

F.H. Doerbeck, W. M. Duncan, W. V. McLevige et al. · IEEE Transactions on Industrial Electronics · 1982 · 15 citations · Full text

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

Monolithic GaAs injection mesa lasers with grown optical facets

F. A. Blum, K. L. Lawley, F.H. Doerbeck et al. · Applied Physics Letters · 1974 · 15 citations

Photonics, Electrical Engineering, Optical Materials +11

Ion implanted GaAs bipolar transistors

Huihua Yuan, F.H. Doerbeck, W. V. McLevige · Electronics Letters · 1980 · 14 citations

Semiconductors, Semiconductor Devices, Electrical Engineering +11