IEEE Electron Device Letters · 1982 · 33 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBandgap EngineeringHeterojunction Bipolar TransistorsHeterojunctionsHeterostructure DevicesIon Implantation Effects
Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> L types of digital integrated circuits.
8
Theory of a Wide-Gap Emitter for Transistors
H. Kroemer · Proceedings of the IRE · 1957 · 457 citations