T. J. Drummond

Dependence of critical layer thickness on strain for In<i>x</i>Ga1−<i>x</i>As/GaAs strained-layer superlattices

I. J. Fritz, S. T. Picraux, L. R. Dawson et al. · Applied Physics Letters · 1985 · 211 citations

Engineering, Materials Engineering, Materials Science +17

Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC

M.E. Sherwin, T. J. Drummond · Journal of Applied Physics · 1991 · 209 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Model for modulation doped field effect transistor

T. J. Drummond, H. Morkoç̌, K. Lee et al. · IEEE Electron Device Letters · 1982 · 206 citations

Engineering, Electrical Engineering, Materials Science +17

Current&amp;#8212;Voltage and capacitance&amp;#8212;Voltage characteristics of modulation-doped field-effect transistors

Kwyro Lee, M. S. Shur, T. J. Drummond et al. · IEEE Transactions on Electron Devices · 1983 · 177 citations

Engineering, Electrical Engineering, Materials Science +17

Low field mobility of 2-<i>d</i> electron gas in modulation doped Al<i>x</i>Ga1−<i>x</i>As/GaAs layers

K. Lee, M. S. Shur, T. J. Drummond et al. · Journal of Applied Physics · 1983 · 172 citations

Natural Sciences, Materials Science, Physics +17