L. R. Dawson

Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

S. H. Huang, Ganesh Balakrishnan, Arezou Khoshakhlagh et al. · Applied Physics Letters · 2006 · 257 citations

Materials Science, Semiconductors, Electrical Engineering +15

n B n structure based on InAs∕GaSb type-II strained layer superlattices

Jean‐Baptiste Rodriguez, E. Plis, G. Bishop et al. · Applied Physics Letters · 2007 · 254 citations

Wide-bandgap Semiconductor, Superconducting Material, Engineering +22

Dependence of critical layer thickness on strain for In<i>x</i>Ga1−<i>x</i>As/GaAs strained-layer superlattices

I. J. Fritz, S. T. Picraux, L. R. Dawson et al. · Applied Physics Letters · 1985 · 210 citations

Materials Science, Crystalline Quality, Critical Layer Thickness +13

Layered structures, epitaxy, and interfaces

J. M. Gibson, L. R. Dawson · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1985 · 186 citations

Materials Science, Engineering, Mechanical Properties +11

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

P. L. Gourley, I. J. Fritz, L. R. Dawson · Applied Physics Letters · 1988 · 163 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +14