L. R. Dawson - Concepedia

Author

L. R. Dawson

Also Known As

Dawson, L. R., Dawson, L. R. (Sandia National Labs., Albuquerque, NM (USA)), L R Dawson, L R. Dawson, L Ralph Dawson, L. Dawson, L. R. DAWSON, L. R. Dawson, L. Ralph Dawson, L.R. Dawson

285

Publications

5.8K

Citations

H-Index

108

Concepts

All Affiliations

Sandia National Laboratories University of New Mexico Sandia National Laboratories California

About

L. R. Dawson is an author at Sandia National Laboratories specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	41	113	5K
2	Applied Physics	41	114	5K
3	Natural Sciences	7	7	317
4	Education	1	1	60
5	Chemistry	1	1	50

L. R. Dawson

122

Publications

5.3K

Citations

H-Index

Page 1

	Year	Citations
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs S. H. Huang, Ganesh Balakrishnan, Arezou Khoshakhlagh, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringGasb DepositionPlanar Growth Mode	2006	257
n B n structure based on InAs∕GaSb type-II strained layer superlattices Jean‐Baptiste Rodriguez, E. Plis, G. Bishop, Applied Physics Letters Wide-bandgap SemiconductorSuperconducting MaterialEngineeringStrained Layer SuperlatticesOptoelectronic Devices	2007	254
Dependence of critical layer thickness on strain for In<i>x</i>Ga1−<i>x</i>As/GaAs strained-layer superlattices I. J. Fritz, S. T. Picraux, L. R. Dawson, Applied Physics Letters Materials ScienceCrystalline QualityCritical Layer ThicknessEngineeringPhysics	1985	210
Layered structures, epitaxy, and interfaces J. M. Gibson, L. R. Dawson OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) Materials ScienceEngineeringMechanical PropertiesLayered StructuresChemical Compounds	1985	186
Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy P. L. Gourley, I. J. Fritz, L. R. Dawson Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorCritical Layer ThicknessLow Dislocation Densities	1988	163
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers Nutan Gautam, H. S. Kim, M. N. Kutty, Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringWide-bandgap SemiconductorLayer Superlattice Photodiode	2010	141
Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures I. J. Fritz, P. L. Gourley, L. R. Dawson Applied Physics Letters Materials ScienceSemiconductorsIngaas/gaas SystemIi-vi SemiconductorCritical Layer Thickness	1987	129
High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice Nutan Gautam, Stephen Myers, Ajit V. Barve, Applied Physics Letters Ii-vi SemiconductorLayer SuperlatticeEngineeringPhysicsMid-wave Infrared	2012	110
Light-hole conduction in InGaAs/GaAs strained-layer superlattices J. E. Schirber, I. J. Fritz, L. R. Dawson Applied Physics Letters EngineeringPhysicsOscillatory Magnetoresistance DataApplied PhysicsIngaas/gaas Strained-layer Superlattices	1985	110
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Ganesh Balakrishnan, Jun Tatebayashi, Arezou Khoshakhlagh, Applied Physics Letters Materials ScienceIi-vi SemiconductorPhotoluminescenceEngineeringPhysics	2006	93

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