Jean‐Baptiste Rodriguez

n B n structure based on InAs∕GaSb type-II strained layer superlattices

Jean‐Baptiste Rodriguez, E. Plis, G. Bishop et al. · Applied Physics Letters · 2007 · 254 citations

Wide-bandgap Semiconductor, Superconducting Material, Engineering +22

Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Gunther Roelkens, Utsav D. Dave, Alban Gassenq et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2014 · 131 citations · Full text

Photonics, Telecommunication Wavelength Range, Optical Interconnects +15

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Jean‐Baptiste Rodriguez, Philippe Christol, L. Cerutti et al. · Journal of Crystal Growth · 2004 · 106 citations

Materials Science, Ii-vi Semiconductor, Engineering +10

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

Eva Ryckeboer, Alban Gassenq, Muhammad Muneeb et al. · Optics Express · 2013 · 104 citations · Full text

Photonic Sensor, Engineering, Planar Concave Grating +20

Mid-IR focal plane array based on type-II InAs∕GaSb strain layer superlattice detector with nBn design

H. S. Kim, E. Plis, Jean‐Baptiste Rodriguez et al. · Applied Physics Letters · 2008 · 91 citations

Materials Science, Semiconductors, Photonics +15