K. Lee

Model for modulation doped field effect transistor

T. J. Drummond, H. Morkoç̌, K. Lee et al. · IEEE Electron Device Letters · 1982 · 206 citations

Device Modeling, Semiconductors, Electrical Engineering +13

Low field mobility of 2-<i>d</i> electron gas in modulation doped Al<i>x</i>Ga1−<i>x</i>As/GaAs layers

K. Lee, M. S. Shur, T. J. Drummond et al. · Journal of Applied Physics · 1983 · 172 citations

Wide-bandgap Semiconductor, Engineering, Remote Donors +16

A new interpretation of "End" resistance measurements

K. Lee, M. S. Shur, K.W. Lee et al. · IEEE Electron Device Letters · 1984 · 47 citations

Engineering, Measurement, Education +17

FET Characterization using gated-TLM structure

S.M. Baier, M. S. Shur, K. Lee et al. · IEEE Transactions on Electron Devices · 1985 · 34 citations

Device Modeling, Electrical Engineering, Engineering +12

Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperatures

T. J. Drummond, S. L. Su, W.G. Lyons et al. · Electronics Letters · 1982 · 28 citations

Wide-bandgap Semiconductor, Cryogenic Temperatures, Intrinsic Transconductances +16