H. Morkoç

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

G. Martin, A. Botchkarev, Angus Rockett et al. · Applied Physics Letters · 1996 · 678 citations · Full text

Very low resistance multilayer Ohmic contact to <i>n</i>-GaN

Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 453 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +9

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Wide-bandgap Semiconductor, Crystal Structure, Electrical Engineering +14

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for <i>n</i>-GaN

S. Ruvimov, Z. Liliental-Weber, J. Washburn et al. · Applied Physics Letters · 1996 · 289 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Micro-LEDs, a Manufacturability Perspective

Kai Ding, V. Avrutin, N. Izyumskaya et al. · Applied Sciences · 2019 · 285 citations · Full text

Engineering, Micro-optical Component, Manufacturability Perspective +16