Concepedia

Bipolar Junction Transistors

Bipolar Junction Transistors is a type of three-terminal semiconductor device that consists of two closely spaced p–n junctions forming emitter, base, and collector regions and operates via both electron and hole conduction to control and amplify current between two terminals using a signal applied at the third.

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7.2K

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1.1K

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2017–2026

219

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Bipolar Junction TransistorBjtBjts

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Publications

3K

Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

Yi Cui, Charles M. Lieber · Science · 2001 · 3.3K citations

, , +17

Semiconductor physics and devices

Materials Today · 2006 · 798 citations · Full text

, , +17

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 752 citations

, , +13

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

, , +17

Simplified analysis of PWM converters using model of PWM switch. Continuous conduction mode

V. Vorperian · IEEE Transactions on Aerospace and Electronic Systems · 1990 · 711 citations

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1–5 of 3K

Authors

7.2K

  1. JS
    J.M.C. Stork

    IBM Research - Thomas J. Watson Research Center, United States

    32 publications · 2.3K citations

    23

    h-index

  2. PA
    P.M. Asbeck

    University of California San Diego, United States

    34 publications · 1.5K citations

    21

    h-index

  3. JD
    John D. Cressler

    Georgia Institute of Technology, United States

    35 publications · 1.1K citations

    21

    h-index

  4. MÖ
    Mikael Östling

    KTH Royal Institute of Technology, Sweden

    29 publications · 950 citations

    20

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  5. DT
    D.D. Tang

    IBM Research - Thomas J. Watson Research Center, United States

    32 publications · 1.3K citations

    20

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1–5 of 7.2K

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1.1K

  1. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    40 h-index

    500 publications

    24.7K citations

  2. AT&T (United States)

    Bedminster, United States

    37 h-index

    370 publications

    16.7K citations

  3. IBM (United States)

    Armonk, United States

    37 h-index

    387 publications

    18K citations

  4. University of Illinois Urbana-Champaign

    Urbana, United States

    31 h-index

    246 publications

    8.8K citations

  5. Texas Instruments (United States)

    Dallas, United States

    28 h-index

    234 publications

    8.2K citations

  6. University of Florida

    Gainesville, United States

    25 h-index

    147 publications

    4.8K citations

  7. University of California, Santa Barbara

    Santa Barbara, United States

    25 h-index

    267 publications

    13.2K citations

  8. KTH Royal Institute of Technology

    Stockholm, Sweden

    24 h-index

    194 publications

    6.8K citations

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  1. IEEE Transactions on Electron Devices

    593 publications · 21.6K citations

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  2. IEEE Electron Device Letters

    360 publications · 13.1K citations

    57

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  3. Applied Physics Letters

    166 publications · 6.8K citations

    42

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  4. IEEE Transactions on Power Electronics

    72 publications · 4.4K citations

    36

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  5. IEEE Journal of Solid-State Circuits

    94 publications · 3.9K citations

    33

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