R.N. Nottenburg - Concepedia

Author

R.N. Nottenburg

Also Known As

A.F.J. Levi, R N Nottenburg, R Nottenburg, R. N. NOTTENBURG, R. N. Nottenburg, R. NOTTENBURG, R. Nottenburg, R.N. Nottenburg

102

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Nokia (United States)University of Southern California Colorado State University Core Competence

About

R.N. Nottenburg is an author at AT&T (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	39	2.2K
2	Applied Physics	21	28	1.8K
3	Computer Engineering	5	5	208
4	Civil Engineering	3	3	48
5	Education	1	1	28

R.N. Nottenburg

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff, Applied Physics Letters Wide-bandgap SemiconductorSpintronicsElectrical EngineeringDramatic EnhancementEngineering	1987	721
Subpicosecond InP/InGaAs heterostructure bipolar transistors Y.-K. Chen, R.N. Nottenburg, M. B. Panish, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringHigh-speed ElectronicsRf Semiconductor	1989	199
A systems perspective on digital interconnection technology R.A. Nordin, A. F. J. Levi, R.N. Nottenburg, Journal of Lightwave Technology EngineeringChip-to-chip Interconnection LevelComputer ArchitectureInterconnection Network ArchitectureIntegrated Circuits	1992	134
Thermophysical properties of oil shales Krishnan Rajeshwar, R.N. Nottenburg, J. DuBow Journal of Materials Science Materials SciencePetroleum ReservoirEngineeringThermodynamicsPetroleum Engineering	1979	87
Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz R.N. Nottenburg, Y.K. Chen, M. B. Panish, IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceF/sub T/EngineeringPhysics	1989	80
Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy R. A. Hamm, M. B. Panish, R.N. Nottenburg, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringMaterials EngineeringEngineering	1989	71
High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors R.N. Nottenburg, Y.-K. Chen, M. B. Panish, IEEE Electron Device Letters SemiconductorsCommon-emitter Current GainsElectrical EngineeringElectronic DevicesEmitter Dimensions	1988	60
Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth R.N. Nottenburg, C. J. Sandroff, D.A. Humphrey, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorSodium Sulfide Nonahydrate	1988	57
InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I<sub>C</sub>characteristic R.N. Nottenburg, H. Temkin, M. B. Panish, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	1986	54
Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy Bahram Jalali, R.N. Nottenburg, Y. K. Chen, Applied Physics Letters Aluminium NitrideExcellent Lateral ScalingElectrical EngineeringSemiconductor TechnologyEngineering	1989	51

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