C. J. Sandroff

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 721 citations

Wide-bandgap Semiconductor, Spintronics, Electrical Engineering +14

Nearly ideal electronic properties of sulfide coated GaAs surfaces

Eli Yablonovitch, C. J. Sandroff, R. Bhat et al. · Applied Physics Letters · 1987 · 335 citations

Materials Science, Semiconductors, Electrical Engineering +13

Effects of passivating ionic films on the photoluminescence properties of GaAs

B. J. Skromme, C. J. Sandroff, Eli Yablonovitch et al. · Applied Physics Letters · 1987 · 225 citations

Engineering, Optoelectronic Devices, Luminescence Property +19

Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

C. J. Sandroff, M. S. Hegde, L. A. Farrow et al. · Applied Physics Letters · 1989 · 176 citations

Engineering, Electronic Passivation, Gaas/sulfide Interfaces +19

Surface-enhanced Raman study of organic sulfides adsorbed on silver: facile cleavage of sulfur-sulfur and carbon-sulfur bonds

C. J. Sandroff, D. R. Herschbach · The Journal of Physical Chemistry · 1982 · 158 citations

Engineering, Surface-enhanced Raman Scattering, Altmetric Attention Score +18