J.C. Bischoff

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 721 citations

Wide-bandgap Semiconductor, Spintronics, Electrical Engineering +14

InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I_Ccharacteristic

R.N. Nottenburg, H. Temkin, M. B. Panish et al. · IEEE Electron Device Letters · 1986 · 54 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +8

High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

R.N. Nottenburg, J.C. Bischoff, M. B. Panish et al. · IEEE Electron Device Letters · 1987 · 44 citations

Electrical Engineering, Engineering, High-speed Electronics +10

A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications

M. Zirngibl, J.C. Bischoff, D. Théron et al. · IEEE Electron Device Letters · 1989 · 15 citations

Semiconductors, Photonics, Electrical Engineering +14

High speed 1.3 μm InGaAs/GaAs superlattice on Si photodetector

M. Zirngibl, J.C. Bischoff, M. Ilegems et al. · Electronics Letters · 1990 · 14 citations

Semiconductors, Photonics, Electrical Engineering +15