Concepedia

J.C. Bischoff

JB

Statistics

Publications

5

Citations

848

H-Index

5

Active since

1986

Affiliations

École Polytechnique Fédérale de Lausanne(Current)

Core Competence

AT&T (United States)

J.C. Bischoff is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and electrical engineering.

Top concepts

Publications per year

1986–1990

5

Publications

5

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 721 citations

, , +14

InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I<sub>C</sub>characteristic

R.N. Nottenburg, H. Temkin, M. B. Panish et al. · IEEE Electron Device Letters · 1986 · 54 citations

, , +8

High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

R.N. Nottenburg, J.C. Bischoff, M. B. Panish et al. · IEEE Electron Device Letters · 1987 · 44 citations

, , +10

A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications

M. Zirngibl, J.C. Bischoff, D. Théron et al. · IEEE Electron Device Letters · 1989 · 15 citations

, , +14

High speed 1.3 μm InGaAs/GaAs superlattice on Si photodetector

M. Zirngibl, J.C. Bischoff, M. Ilegems et al. · Electronics Letters · 1990 · 14 citations

, , +15

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