J.C. Bischoff

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Publications

Citations

849

H-Index

Active since

1986

Affiliations

École Polytechnique Fédérale de Lausanne(Current)

Core Competence

AT&T (United States)

J.C. Bischoff is an author at École Polytechnique Fédérale de Lausanne specializing in electrical engineering, engineering, and semiconductor devices.

Publications per year

1986–1990

Publications

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I<sub>C</sub>characteristic

R.N. Nottenburg, H. Temkin, M. B. Panish et al. · IEEE Electron Device Letters · 1986 · 54 citations

Engineering, Electrical Engineering, Physics +17

High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

R.N. Nottenburg, J.C. Bischoff, M. B. Panish et al. · IEEE Electron Device Letters · 1987 · 44 citations

Engineering, Electrical Engineering, Physics +17

A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications

M. Zirngibl, J.C. Bischoff, D. Théron et al. · IEEE Electron Device Letters · 1989 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

High speed 1.3 μm InGaAs/GaAs superlattice on Si photodetector

M. Zirngibl, J.C. Bischoff, M. Ilegems et al. · Electronics Letters · 1990 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

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