M. Ilegems - Concepedia

Author

M. Ilegems

École Polytechnique Fédérale de Lausanne

Also Known As

C. Dill, M Ilegems, M. ILEGEMS, M. Ilegems, Marc ILEGEMS, Marc Ilegems

323

Publications

11.7K

Citations

H-Index

129

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne École Polytechnique

About

M. Ilegems is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	53	132	10.3K
2	Applied Physics	53	129	10.3K
3	Natural Sciences	7	7	369
4	Medicine	2	2	83
5	Biomedical Engineering	2	2	83

M. Ilegems

141

Publications

10.9K

Citations

H-Index

Page 1

	Year	Citations
Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature Mattias Beck, Daniel Hofstetter, T. Aellen, Science EngineeringLaser ScienceLaser ApplicationsLaser MaterialLaser Facets	2002	773
Infrared Lattice Vibrations and Free-Electron Dispersion in GaN A. S. Barker, M. Ilegems Physical review. B, Solid state Wide-bandgap SemiconductorPhotonicsOptical MaterialsEngineeringPhysics	1973	707
Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers R. Dingle, D. D. Sell, S. E. Stokowski, Physical review. B, Solid state SemiconductorsWide-bandgap SemiconductorEngineeringPhysicsOptical Properties	1971	525
Measurement of Cavity-Polariton Dispersion Curve from Angle-Resolved Photoluminescence Experiments R. Houdré, Claude Weisbuch, R. P. Stanley, Physical Review Letters PhotonicsQuantum ScienceCavity-polariton Dispersion CurveCavity PolaritonEngineering	1994	456
Vacuum-field Rabi splitting in the presence of inhomogeneous broadening: Resolution of a homogeneous linewidth in an inhomogeneously broadened system R. Houdré, R. P. Stanley, M. Ilegems Physical Review A Quantum ScienceEngineeringPhysicsApplied PhysicsCondensed Matter Physics	1996	338
Donor-acceptor pair recombination in GaN R. Dingle, M. Ilegems Solid State Communications EngineeringPhysicsApplied PhysicsGan Power DeviceDonor-acceptor Pair Recombination	1971	261
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN J.‐F. Carlin, M. Ilegems Applied Physics Letters Materials SciencePhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	260
Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and Al<i>x</i>Ga1−<i>x</i>As M. Ilegems Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringMolecular-beam EpitaxyEngineering	1977	255
Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons R. Houdré, J. L. Gibernon, P. Pellandini, Physical review. B, Condensed matter Categoryquantum ElectronicsEngineeringCavity QedSaturation DensitySemiconductors	1995	238
Phase equilibria in ternary III–V systems M. B. Panish, M. Ilegems Progress in Solid State Chemistry EngineeringPhysicsPhase EquilibriumPhase EquilibriaApplied Physics	1972	237

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