B. J. Skromme

Effects of passivating ionic films on the photoluminescence properties of GaAs

B. J. Skromme, C. J. Sandroff, Eli Yablonovitch et al. · Applied Physics Letters · 1987 · 225 citations

Engineering, Materials Engineering, Materials Science +14

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

Eli Yablonovitch, B. J. Skromme, R. Bhat et al. · Applied Physics Letters · 1989 · 99 citations

Natural Sciences, Chemistry, Materials Science +16

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

B. J. Skromme, E. Luckowski, Karen Moore et al. · Journal of Electronic Materials · 2000 · 99 citations

Engineering, Electrical Engineering, Materials Science +16

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

B. J. Skromme, Sukanta Bose, B. Lee et al. · Journal of Applied Physics · 1985 · 97 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high-quality GaAs using trimethylgallium and diethylarsine

R. Bhat, M.A. Koza, B. J. Skromme · Applied Physics Letters · 1987 · 94 citations

Engineering, Materials Engineering, Materials Science +16