Subpicosecond InP/InGaAs heterostructure bipolar transistors

Abstract

Bipolar transistors with subpicosecond extrinsic delay are discussed. These InP/InGaAs heterostructure transistors show a unity-current-gain cutoff frequency f/sub $/T=165 GHz and maximum oscillation frequency f/sub MAX/=100 GHz at room temperature. The authors model shows that an f/sub $/T beyond 386 GHz is obtainable by further vertical scaling. Ring oscillators implemented with nonthreshold logic (NTL) and transistors having f/sub MAX/=71 GHz show a propagation delay of 14.7 ps and 5.4 mW average power consumption per stage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>