D.A. Humphrey

Subpicosecond InP/InGaAs heterostructure bipolar transistors

Y.-K. Chen, R.N. Nottenburg, M. B. Panish et al. · IEEE Electron Device Letters · 1989 · 199 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz

R.N. Nottenburg, Y.K. Chen, M. B. Panish et al. · IEEE Electron Device Letters · 1989 · 80 citations

Electrical Engineering, Semiconductor Device, F/sub T/ +12

Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy

R. A. Hamm, M. B. Panish, R.N. Nottenburg et al. · Applied Physics Letters · 1989 · 71 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +10

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

R.N. Nottenburg, Y.-K. Chen, M. B. Panish et al. · IEEE Electron Device Letters · 1988 · 60 citations

Semiconductors, Common-emitter Current Gains, Electrical Engineering +10

Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth

R.N. Nottenburg, C. J. Sandroff, D.A. Humphrey et al. · Applied Physics Letters · 1988 · 57 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11