Subpicosecond InP/InGaAs heterostructure bipolar transistors

Y.-K. Chen, R.N. Nottenburg, M. B. Panish, +2

IEEE Electron Device Letters

Semiconductor TechnologyElectrical EngineeringEngineeringHigh-speed ElectronicsRf Semiconductor +9

Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz

R.N. Nottenburg, Y.K. Chen, M. B. Panish, +2

IEEE Electron Device Letters

Electrical EngineeringSemiconductor DeviceF/sub T/EngineeringPhysics +10

Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy

R. A. Hamm, M. B. Panish, R.N. Nottenburg, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringMaterials EngineeringEngineering +8

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

R.N. Nottenburg, Y.-K. Chen, M. B. Panish, +2

IEEE Electron Device Letters

SemiconductorsCommon-emitter Current GainsElectrical EngineeringElectronic DevicesEmitter Dimensions +8

Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth

R.N. Nottenburg, C. J. Sandroff, D.A. Humphrey, +2

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorSodium Sulfide Nonahydrate +9

Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy

Bahram Jalali, R.N. Nottenburg, Y. K. Chen, +4

Applied Physics Letters

Aluminium NitrideExcellent Lateral ScalingElectrical EngineeringSemiconductor TechnologyEngineering +9

Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications

Imran Mehdi, Steven M. Marazita, D.A. Humphrey, +8

IEEE Transactions on Microwave Theory and Techniques

Electrical EngineeringMillimeter Wave TechnologyIf BandEngineeringRadio Frequency +10

GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorption

Sarath D. Gunapala, B. F. Levine, R. A. Logan, +2

Applied Physics Letters

Wide-bandgap SemiconductorOptical MaterialsEngineeringBound-to-continuum State AbsorptionOptical Amplifier +17

Microwave noise performance of InP/InGaAs heterostructure bipolar transistors

Y.-K. Chen, R.N. Nottenburg, M. B. Panish, +2

IEEE Electron Device Letters

Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorPhysics +10

An all solid-state 640 GHz subharmonic mixer

Imran Mehdi, Peter H. Siegel, D.A. Humphrey, +8

Electrical EngineeringEngineeringRadio FrequencyHigh-frequency DeviceSolid-state 640 +6