High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

Abstract

Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3*3 and 0.8*3 mu m/sup 2/, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface recombination velocity and nonequilibrium carrier transport in the thin (800-AA) InGaAs base enhance the DC performance of these transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>