R. A. Hamm

Subpicosecond InP/InGaAs heterostructure bipolar transistors

Y.-K. Chen, R.N. Nottenburg, M. B. Panish et al. · IEEE Electron Device Letters · 1989 · 199 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

D. V. Lang, M. B. Panish, Federico Capasso et al. · Applied Physics Letters · 1987 · 145 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Electrical Engineering +13

Kinetic surface roughening in molecular beam epitaxy of InP

M. A. Cotta, R. A. Hamm, Thomas W. Staley et al. · Physical Review Letters · 1993 · 117 citations

Materials Science, Materials Engineering, Surface Characterization +12

InGaAs/InP long wavelength quantum well infrared photodetectors

Sarath D. Gunapala, B. F. Levine, D. Ritter et al. · Applied Physics Letters · 1991 · 115 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

J. M. Vandenberg, R. A. Hamm, M. B. Panish et al. · Journal of Applied Physics · 1987 · 108 citations

X-ray Crystallography, Engineering, Crystal Growth Technology +19