Subpicosecond InP/InGaAs heterostructure bipolar transistors

Y.-K. Chen, R.N. Nottenburg, M. B. Panish, +2

IEEE Electron Device Letters

Semiconductor TechnologyElectrical EngineeringEngineeringHigh-speed ElectronicsRf Semiconductor +9

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

D. V. Lang, M. B. Panish, Federico Capasso, +4

Applied Physics Letters

Wide-bandgap SemiconductorIi-vi SemiconductorElectrical EngineeringEngineeringPhysics +11

Kinetic surface roughening in molecular beam epitaxy of InP

M. A. Cotta, R. A. Hamm, Thomas W. Staley, +4

Physical Review Letters

Materials ScienceMaterials EngineeringSurface CharacterizationSurface RougheningEngineering +10

InGaAs/InP long wavelength quantum well infrared photodetectors

Sarath D. Gunapala, B. F. Levine, D. Ritter, +2

Applied Physics Letters

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringIi-vi SemiconductorEngineering +13

High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

J. M. Vandenberg, R. A. Hamm, M. B. Panish, +1

Journal of Applied Physics

X-ray CrystallographyEngineeringCrystal Growth Technology/Inp SuperlatticesOptical Properties +17

High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure

S. Chandrasekhar, L.M. Lunardi, A.H. Gnauck, +2

IEEE Photonics Technology Letters

EngineeringOptoelectronic DevicesIntegrated CircuitsPhotoelectric SensorRf Semiconductor +16

Implant-induced high-resistivity regions in InP and InGaAs

S. J. Pearton, C. R. Abernathy, M. B. Panish, +2

Journal of Applied Physics

EngineeringSheet ResistivityImplant-induced High-resistivity RegionsSemiconductor DeviceSemiconductors +17

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

M. B. Panish, H. Temkin, R. A. Hamm, +1

Applied Physics Letters

Ii-vi SemiconductorPhotonicsOptical MaterialsEngineeringPhotoluminescence +11

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

H. Temkin, M. B. Panish, P. M. Petroff, +3

Applied Physics Letters

Materials ScienceIi-vi SemiconductorPhotoluminescenceEngineeringPhysics +10

Critical layer thickness in strained Ga1−<i>x</i>In<i>x</i>As/InP quantum wells

H. Temkin, D. Gershoni, S. N. G. Chu, +3

Applied Physics Letters

Materials SciencePseudomorphic LimitWide-bandgap SemiconductorIi-vi SemiconductorCritical Layer Thickness +9