Y.-K. Chen - Concepedia

Author

Y.-K. Chen

AT&T (United States)

Also Known As

Y.-K. Chen

Publications

432

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Nokia (United States)Cornell University

About

Y.-K. Chen is an author at AT&T (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	415
2	Electrical Engineering	8	8	415
3	Applied Physics	7	7	264
4	Physics	2	2	62
5	Computer Engineering	1	1	151

Y.-K. Chen

Publications

415

Citations

H-Index

Page 1

	Year	Citations
Electronic-photonic integrated circuits on the CMOS platform Lionel C. Kimerling, Dae-Hwan Ahn, Alyssa Apsel, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Optical MaterialsEngineeringDevice IntegrationIntegrated PhotonicsOptical Filter Slices	2006	151
A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates G.-W. Wang, Y.-K. Chen, W. J. Schaff, IEEE Transactions on Electron Devices Al/sub 0.5/In/subSemiconductor TechnologyElectrical EngineeringEngineeringMicrowave Performance	1988	72
High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors R.N. Nottenburg, Y.-K. Chen, M. B. Panish, IEEE Electron Device Letters SemiconductorsCommon-emitter Current GainsElectrical EngineeringElectronic DevicesEmitter Dimensions	1988	60
Microwave noise performance of InP/InGaAs heterostructure bipolar transistors Y.-K. Chen, R.N. Nottenburg, M. B. Panish, IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorPhysics	1989	35
Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application F. Ren, C. R. Abernathy, S. J. Pearton, IEEE Electron Device Letters Microwave CircuitsElectrical EngineeringExcellent DcEngineeringRf Semiconductor	1993	28
Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors Bahram Jalali, Y.-K. Chen, R.N. Nottenburg, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringCollector BreakdownEngineeringCollector Multiplication	1990	27
High-frequency submicrometer Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors Bahram Jalali, R.N. Nottenburg, Y.-K. Chen, IEEE Electron Device Letters Electrical EngineeringSubmicrometer Alinas/ingaas HbtEmitter DimensionsHigh-speed ElectronicsEngineering	1989	21
dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor F.E. Najjar, D.C. Radulescu, Y.-K. Chen, Applied Physics Letters SemiconductorsRoom TemperatureElectrical EngineeringElectronic DevicesEngineering	1987	21

Page 1