Concepedia

Base Width Modulation

Base Width Modulation is a phenomenon in bipolar junction transistors wherein the effective width of the base region varies dynamically with the applied collector-base voltage, thereby influencing carrier transport and transistor output characteristics due to the modulation of charge recombination and minority carrier gradient.

9

Publications

364

Citations

28

Authors

13

Institutions

Publications per year

2017–2026

1

Parents

Publications

9

CW measurement of HBT thermal resistance

Douglas Dawson, Aditya K. Gupta, M. Salib · IEEE Transactions on Electron Devices · 1992 · 181 citations

, , +17

A physics-based current-dependent base resistance mode; for advanced bipolar transistors

J.S. Yuan, Juin J. Liou, W.R. Eisenstadt · IEEE Transactions on Electron Devices · 1988 · 41 citations · Full text

, , +16

Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors

A. Ouacha, M. Willander, B. Hammarlund et al. · Journal of Applied Physics · 1993 · 38 citations

, , +17

A first order theory of the p<sup>+</sup>-n-n<sup>+</sup>edge-illuminated silicon solar cell at very high injection levels

C. Goradia, B. L. Sater · IEEE Transactions on Electron Devices · 1977 · 27 citations

, , +16

Laser Writable Multifunctional van der Waals Heterostructures

Bao‐Wang Su, Xilin Zhang, Bin‐Wei Yao et al. · Small · 2020 · 21 citations

, , +17

1–5 of 9

Authors

28

  1. MS
    M. Salib

    Westinghouse Electric (United States), United States

    1 publications · 181 citations

    1

    h-index

  2. BL
    B. L. Sater

    Glenn Research Center, United States

    1 publications · 27 citations

    1

    h-index

  3. MW
    M. Willander

    Linköping University, Sweden

    1 publications · 38 citations

    1

    h-index

  4. AO
    A. Ouacha

    Swedish Defence Research Agency, Sweden

    1 publications · 38 citations

    1

    h-index

  5. JT
    Jian‐Guo Tian

    Nankai University, China

    1 publications · 21 citations

    1

    h-index

1–5 of 28

Institutions

13

  1. University of Florida

    Gainesville, United States

    3 h-index

    7 publications

    147 citations

  2. Shanxi University

    Taiyuan, China

    1 h-index

    2 publications

    42 citations

  3. University of Central Florida

    Orlando, United States

    1 h-index

    1 publications

    41 citations

  4. Linköping University

    Linköping, Sweden

    1 h-index

    3 publications

    114 citations

  5. Motorola (United States)

    Schaumburg, United States

    1 h-index

    1 publications

    13 citations

  6. Tianjin University of Technology

    Tianjin, China

    1 h-index

    2 publications

    42 citations

  7. Glenn Research Center

    Cleveland, United States

    1 h-index

    1 publications

    27 citations

  8. Nankai University

    Tianjin, China

    1 h-index

    6 publications

    126 citations

1–8 of 13

Venues

  1. IEEE Transactions on Electron Devices

    5 publications · 275 citations

    5

    h-index

  2. Journal of Applied Physics

    2 publications · 55 citations

    2

    h-index

  3. Small

    1 publications · 21 citations

    1

    h-index

  4. Proceedings of the IEEE

    1 publications · 13 citations

    1

    h-index

1–4