Concepedia

Common Emitter Configuration

Common Emitter Configuration is a transistor amplifier configuration in which the emitter terminal is common to both the input and output circuits, distinguished by its high voltage and current gain, and in which the base serves as the input terminal and the collector as the output terminal.

61

Publications

2.3K

Citations

193

Authors

72

Institutions

Publications per year

2017–2026

3

Parents

Publications

61

Laser operation of a heterojunction bipolar light-emitting transistor

G. Walter, N. Holonyak, Meixin Feng et al. · Applied Physics Letters · 2004 · 158 citations

, , +16

Quantum-well resonant tunneling bipolar transistor operating at room temperature

Federico Capasso, Sabyasachi Sen, A. C. Gossard et al. · IEEE Electron Device Letters · 1986 · 147 citations

, , +17

Tunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain

M. Heiblum, D. Thomas, C. M. Knoedler et al. · Applied Physics Letters · 1985 · 139 citations

, , +17

AlGaN/GaN heterojunction bipolar transistor

L. McCarthy, P. Kozodoy, M.J.W. Rodwell et al. · IEEE Electron Device Letters · 1999 · 127 citations

, , +17

Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/

A. Schüppen, U. Erben, A. Gruhle et al. · 2002 · 126 citations

, , +17

1–5 of 61

Authors

193

  1. NH
    N. Holonyak

    University of Illinois Urbana-Champaign, United States

    4 publications · 326 citations

    4

    h-index

  2. RC
    R. Chan

    University of Illinois Urbana-Champaign, United States

    3 publications · 292 citations

    3

    h-index

  3. UE
    U. Erben

    Universität Ulm, Germany

    3 publications · 153 citations

    3

    h-index

  4. AS
    A. Schüppen

    Daimler (Germany), Germany

    3 publications · 153 citations

    3

    h-index

  5. AG
    A. Gruhle

    Daimler (Germany), Germany

    3 publications · 153 citations

    3

    h-index

1–5 of 193

Institutions

72

  1. Daimler (Germany)

    Stuttgart, Germany

    4 h-index

    17 publications

    915 citations

  2. University of Illinois Urbana-Champaign

    Urbana, United States

    4 h-index

    14 publications

    1.1K citations

  3. AT&T (United States)

    Bedminster, United States

    3 h-index

    13 publications

    903 citations

  4. Universität Ulm

    Ulm, Germany

    3 h-index

    4 publications

    279 citations

  5. University of California, Santa Barbara

    Santa Barbara, United States

    3 h-index

    18 publications

    1.1K citations

  6. NTT (Japan)

    Tokyo, Japan

    2 h-index

    2 publications

    177 citations

  7. Redondo Optics (United States)

    Redondo Beach, United States

    2 h-index

    6 publications

    291 citations

  8. General Electric (United States)

    Boston, United States

    2 h-index

    3 publications

    78 citations

1–8 of 72

Venues

  1. Applied Physics Letters

    10 publications · 560 citations

    10

    h-index

  2. IEEE Transactions on Electron Devices

    7 publications · 162 citations

    7

    h-index

  3. IEEE Electron Device Letters

    5 publications · 349 citations

    5

    h-index

  4. Electronics Letters

    4 publications · 78 citations

    4

    h-index

  5. IEEE Journal of Solid-State Circuits

    3 publications · 199 citations

    3

    h-index

1–5